James
Robert Biard, Ph.D.
Consulant
Advanced Optical Products
Education:
Institution Location Date Degree
Paris Junior College Paris, Texas 1951 A.S.
Texas A&M University College Station, Texas 1954 B.S.E.E.
Texas A&M University College Station, Texas 1956 M.S.E.E.
Texas A&M University College Station, Texas 1957 Ph.D.E.E.
Society Affiliations:
Tau Beta Pi, Eta Kappa Nu, Phi Kappa Phi, Sigma Xi,
American Physical Society, Life Fellow of IEEE, and member National
Academy of Engineering.
Work Experience:
Dr. J. R. (Bob) Biard became Chief Scientist of the
Honeywell MICRO SWITCH Division in 1987. He retired 12/31/98 and
was hired by Honeywell and Advanced Optical Products as a consultant.
In the AdOpCo job assignment Dr. Biard is part of a team developing
Vertical Cavity Surface Emitting Lasers (VCSELs). He also is involved
in the interface between the VCSEL team and universities. In his
Honeywell assignment he is working on magnetic sensors and helping
to develop a BiCMOS process. He started the MICRO SWITCH IC &
Sensor Design Center in Richardson, Texas and his product development
responsibilities include optoelectronic components (light emitting
diodes and photo detectors), fiber optic components and transmitter
& receiver modules, and silicon Hall effect and pressure sensors.
He is also on the staff of Texas A&M University as an Adjunct
Professor of Electrical Engineering. He has served in this capacity
since 1980. From 1978 to 1987 Dr. Biard was Chief Scientist of the
Honeywell Optoelectronics Division and was a member of the Components
Group Sensor Planning Team. He was also the Components Group representative
on the Honeywell Technology Board (HTB). The HTB was concerned with
the development and transfer of technology throughout the Honeywell
corporate structure. Dr. Biard joined Spectronics, Inc. as Vice
President of Research in 1969 when the company was founded. Spectronics,
Inc. was acquired by Honeywell in 1978. Previously he worked for
Texas Instruments, Inc., from 1957 to 1969. While at TI he participated
in the development of transistor circuits, microwave and optoelectronic
components, avalanche photodiodes, silicon MOS technology, and compound
semiconductor materials technology. In 1991 Dr. Biard was elected
to membership in the National Academy of Engineering. In 1989 he
received the Honeywell Lund Award. In 1986 he was recognized as
a Distinguished Alumnus of Texas A&M University. In 1985, He
was a recipient of the Patrick E. Haggerty Innovation Award for
his contribution to the design and development of Schottky Logic.
Dr. Biard is a Life Fellow of IEEE; he was elected to Fellow of
the IEEE in 1969 with a citation "For outstanding contributions
in the field of optoelectronics."
Publications:
In the course of his technical career, Dr. Biard has
published more than two dozen technical papers and made about the
same number of unpublished presentations at major technical conferences.
He also developed a one-week seminar on Fiber Optic Data Transmission
that he presented on five occasions in various parts of the U.S..
He served as a distinguished lecturer for LEOS in 2000-2001. Some
of the key papers are listed below:
W. T. Matzen and J. R. Biard, Differential Amplifier
Features D-C Stability," Electronics, January 16, 1959.
J. R. Biard, E. L. Bonin, W. N. Carr, and G. E. Pittman, "GaAs
Infrared Source," PGED Electron Device Conference, Washington,
D.C.; October 1962.
J. R. Biard, "Low frequency Reactance Amplifier,"
IEEE Proc., Vol. 51, No. 2, pp. 298-303; February, 1963.
W. N. Carr, and J. R. Biard, "Common Occurrence of Artifacts
or 'Ghost' Peaks in Semiconductor Injection Electroluminescence
Spectra," Journal of Applied Physics, Vol. 35, No. 9, pp. 2776-2777;
September, 1964.
J. R. Biard, "Degradation of Quantum Efficiency
in GaAs Light Emitters," GaAs: 1966 Symposium Proceedings,
(Reading England, September 1966), Institute of Physics and Physical
Society, pp. 113-117.
Ralph H. Johnson, Brian W. Johnson, and J. R. Biard,
"Unified Physical DC and AC MESFET Model for Circuit Simulation
and Device Modeling." IEEE Electron Devices Transactions, September,
1987.
Ananth Ramaswamy, Jan P. van der Ziel, J. Robert
Biard, Ralph Johnson, and Jim A. Tatum, “Electrical Characteristics
of Proton-Implanted Vertical-Cavity Surface-Emitting Lasers,”
IEEE Journal of Quantum Electronics, Vol. 34, No. 11; November,
1998.
Patents:
Dr. Biard holds 38 U.S. and 17 foreign patents;
twelve other patents are pending. Five of his more significant patents
are listed below. These patents include one of the first transistor
DC differential amplifiers, the GaAs light emitting diode, the optical
isolator, Schottky clamped logic circuits, and the MOS read only
memory (ROM).
U.S. Patent No. 3,046,487, "Differential Transistor Amplifier,”
J. R. Biard and W. T. Matzen; July 24, 1962.
U.S. Patent No. 3,293,513, "Semiconductor Radiant Diode,”
J. R. Biard and G. E. Pittman; December 20, 1966.
U.S. Patent No. 3,304,431, "Photosensitive Transistor Chopper,”
J. R. Biard, E. L. Bonin, and J. S. Kilby; February 14, 1967.
U.S. Patent No. 3,463,975, "Unitary Semiconductor High-Speed
Switching Device Using a Barrier Diode," J. R. Biard; August
26, 1969.
U.S. Patent No. 3,541,543, "MOS Binary Decoder,” R. H.
Crawford and J. R. Biard; May 20, 1969.
|