Dr. S. L. Chuang
Department of Electrical and Computer
Engineering
"A Tutorial on Strained Quantum-Well and
Quantum-Dot Lasers: What do those experiments really mean?"
Thursday, October 21st, 2004, 6.30 PM
(at 6:00 p.m. refreshments with speakers)
"
Semiconductor Lasers: from Homojunctions to Quantum Dots "
Prof.
Peter G. Eliseev
Center for High
Technology Materials,
University of New Mexico
1313
Goddard SE,
eliseev@chtm.unm.edu
Thursday, August 19th, 2004
(at 6:00 p.m. refreshments with the
speaker)
PLACE: University of Texas at Dallas, Student Union
Click here for campus map,
building SU
The presentation is devoted to
the memory of outstanding Russian scientist, one of founders of the Quantum
Electronics, Prof. N. G. Basov.
Abstract
A review is given on development of semiconductor lasers beginning from ideas and realization of first laser diodes to quantum-well and quantum-dot lasers. The progress in room-temperature threshold current density (improvement by 4-5 decades) is discussed. Role of electron and optical confinement is commented. A contemporary approach to the evolution of semiconductor laser devices is presented. Recent results on ultra-low current density laser structures on the base of quantum dots and quantum dashes are discussed. The energy spectra of QD ensembles are presented and analyzed from the point of view of influence of the confinement potential shape on the spectral peak positions. Data are given on anisotropy of quantum-dash structures, on gain cross-section and gain saturation in InAs/InGaAs quantum-dot lasers, on migration of carriers in structures with QDs. High overall efficiency of laser diodes (up to ~70%) is also discussed.
Biography
Peter G. Eliseev was graduated from Moscow State University (Russia)
in 1959. Since 1963 he is a scientific coworker at P. N. Lebedev Physics
Institute (Moscow, Russia), last time as a Principal Researcher. Since 1995, he
is Research Professor at the Center for High Technology Materials, University
of New Mexico. He is engaged in semiconductor laser technology and physics
since 1962, developed several types of lasers starting from homojunction
structures, then continued development of a number of heterostructures
(introducing for the first time InGaAsP/InP and InGaAsSb/GaSb laser diodes),
and then developing quantum-size heterostructure including ultra-low threshold
quantum dot laser. He demonstrated and interpreted several phenomena in
semiconductor lasers: voltage saturation, coherent collapse, asymmetrical
nonlinear interaction of spectral modes, bistability in the external cavity, “optoelectronic
signal”, frequency chirping, etc. He had awarded with the State Prize in
Science and Technology of the USSR in 1984 and with the N. Holonyak OSA Award
in 2004. Senior member of IEEE, member of OSA and Russian Academy of Natural
Sciences.
" High-Power,
Surface-emitting DFB
Lasers
with Shaped Gratings"
Dr. Steven Macomber
Thursday, June 3rd, 2004
(at 6:00 p.m. refreshments with the
speaker)
PLACE: University of Texas at Dallas, Galaxy Room, Student Union
Click here for campus map,
building SU
Abstract
The simultaneous realization of both power and beam quality has long been a goal of high-power semiconductor laser research and development. Surface-emitting DFB (SE-DFB) lasers have precisely-shaped holographic gratings that are formed by imaging one of the two interfering beams through a binary-optic phase plate. In particular, they can be shaped to create a distributed unstable resonator. These devices have, in the past, been demonstrated to produce near diffraction-limited beam quality but tend to become aberrated at high power. A recent study of design parameters of SE-DFB lasers has revealed certain trends that significantly reduce the tendency to filament. A specific design that corrects for thermally-induced aberrations will be discussed.
Biography
Steven Macomber is
currently an independent consultant in the field of high-power semiconductor
lasers. He was formerly the manager of the Semiconductor Laser Research and
Development Group at Spectra Physics in Tuscson, Arizona. Prior to that, he was
a Senior Scientist at Hughes Danbury Optical Systems in Danbury, Connecticut
where he worked on the development of spectrometric sensors and high-power
semiconductor lasers and arrays. Steven holds a Ph.D. degree in Physics from
Rensselaer Polytechnic Institute (Troy, New York).
" Perspectives on Future Interconnect Technologies "
Dr.
Elisabeth Marley-Koontz
Texas
Instruments, Inc.
Dallas, Texas 75243
Thursday, May 27th, 2004
(at 6:00 p.m. refreshments with the
speaker)
PLACE: University of Texas at Dallas, Galaxy Room, Student Union
Click here for campus map,
building SU
Abstract
Innovative product concepts for additional network peripherals, creative and new differentiated services, and more bandwidth-demanding applications under development will influence the need for increased bandwidth within the communication network infrastructure. The increase in peripherals, applications, and services will thus have a significant impact on the future highspeed interconnect requirements and architectures within a range of network infrastructure equipment. Furthermore, the addition of distributed services, such as storage applications, will likewise affect the selection of future interconnect technologies.
Binary electrical, multi-level electrical, single wavelength optical, and multi-wavelength optical solutions are examples of the technologies under investigation for the highspeed interconnections of the future. Although the optimum solution is not yet identified, in order to better down select, a number of topics are in need of further investigation; packaging, backward compatibility, and power and thermal management, to name a few. From TI’s perspective as an electronic component supplier, the discussion will touch upon the bandwidth driving applications as well as a few of the areas in need of additional investigation for realization of highspeed interconnect solutions.
Biography
Dr. Elisabeth Marley-Koontz is
currently a research and development process engineer in the Silicon Technology
Development (SiTD) organization of Texas Instruments
Inc., in Dallas, Texas.
Her focus is strained Si-based materials growth and analysis for development of
the 65nm process node. From 2001-2003 she jointly held the positions of
Photonics Strategy Manager in SiTD and R&D Manager in the Fiber Optics and
Backplane Business Unit. She was responsible for setting the strategic
direction for TI with regard to photonic technology, and managing the
cross-departmental effort to assess future optical input/output product and
technology needs for TI’s high performance integrated circuits. She also led
multiple university research interactions and strategic customer relationships
for joint exploration of the future optical technology. From 2000-2001
Elisabeth was with the TI Digital Light Processing Products organization, where
she developed micro-optical-electromechanical systems (MOEMS) solutions for the
optical networking market.
Elisabeth is a technical
consultant to the TI Ventures organization and also a sits on the TI Ventures
Strategy Team. Elisabeth is a frequent participant in programs to increase
middle school and high school students’ interest in engineering and science. She
is also a founder of the Women of TI Fund.
Elisabeth serves on conference
program committees for the IEEE, and research proposal review committees for
the State of Texas and the Semiconductor Research Corporation. She is a member
of IEEE, Tau Beta Pi, Eta Kappa Nu, and Sigma Xi. She has over 20 published papers and
articles. Elisabeth also sits on the Southern Methodist University Electrical
Engineering Department Advisory Board.
Elisabeth received her B.S. in
Electrical Engineering from Southern Methodist University in 1994, her S.M. in
Electrical Engineering and Computer Science from MIT in 1996, and her Ph.D. in
Electrical Engineering and Computer Science from MIT in 2000.
" Photonic Integrated Circuits "
Professor
James J. Coleman
Department
of Electrical and Computer Engineering
University
of Illinoise, Urbana, IL 61081
Thursday, May 6th, 2004
(at 6:00 p.m. refreshments with the
speaker)
PLACE: University of Texas at Dallas, Galaxy Room, Student Union
Click here for campus map,
building SU
Abstract
The level of integration in silicon
integrated circuits is such that microprocessors are approaching the 100
million transistor level. In contrast, photonic integrated circuits are
only comprised of a handful of devices. In this talk, we describe why photonic
integration is so much more challenging and present some examples of technologies
that will lead to a true photonic IC chip.
Biography
James J. Coleman holds the Intel Alumni Endowed Chair in
Electrical and Computer Engineering at the University of Illinois.
Professor Coleman received all of his degrees in electrical engineering from
the University of Illinois, and returned there as a member of the faculty after
working at Bell Laboratories and Rockwell International. He and his students
are presently involved in developing high performance narrow linewidth DBR
lasers, integrable lasers and other photonic devices by selective-area epitaxy,
and the growth processes for quantum dot and quantum wire lasers. Professor
Coleman has published more than 350 papers in technical journals and 9 book
chapters. He has 5 patents and has given more than 70 invited presentations.
Professor Coleman won the IEEE LEOS William Streifer Scientific Achievement
Award in 2000 and was an IEEE LEOS Distinguished Lecturer in 1997-98 and
1998-99. He is a Fellow of the IEEE, the Optical Society of America, the
American Physical Society, and the American Association for the Advancement of
Science.
" Waterfalls and Other Curious Lasers "
Professor
Lee W. Casperson
Electrical
& Computer Engineering and Physics Department
Portland
State University, Portland,
Oregon
Thursday, April 1st, 2004
(at 6:00 p.m. refreshments with the
speaker)
PLACE: University of Texas at Dallas, Galaxy Room, Student Union
Click here for campus map,
building SU
Abstract
Lasers come in many sizes and shapes and
operate according to a variety of physical principles. Many lasers even occur
in nature. Several unusual lasers and laser-like systems will be demonstrated
or illustrated with video recordings.
Biography
Lee W. Casperson is a native of Portland, Oregon. He received his B.S. degree
in physics from the Massachusetts Institute of Technology and his M.S. and
Ph.D. degrees in electrical engineering and physics from the California
Institute of Technology. He served several years as a professor in the
Department of Electrical Engineering at the University of California at Los
Angeles, and he is currently a professor in the Department of Electrical and
Computer Engineering and in the Department of Physics at Portland State
University.
Dr. Casperson is an author of more than 200 research publications. He is a fellow of the Optical Society of America (OSA), the Institute of Electrical and Electronics Engineers (IEEE), and the American Physical Society (APS). He was awarded the Centennial Medal of the IEEE and the Branford Price Millar Award for Faculty Excellence of Portland State University. He is currently serving as a Distinguished Traveling Lecturer for the APS Division of Laser Science.
" Exploiting the Advantages of Free-space
Optical
Interconnections in Multiprocessor Systems"
Dr.
Marc Christensen
Southern Methodist
University
Thursday, December 4th, 2003
(at 6:00 p.m. refreshments with
the speaker)
PLACE: University of Texas at Dallas, Galaxy Room, Student Union
Click
here for campus map, building 9
Abstract
Free-space optical interconnects (FSOI), based on
compact, high throughput (~Tbit/s/cm2) “smart pixel” technology,
promise to overcome the interconnection limits of planar technologies for multiprocessor
problems. Significant applications are
found in switching and multi-processor computing. In this talk the interconnection advantages
of FSOI for overcoming multiprocessor interconnection bottlenecks are analyzed
and experiments that validate new FSOI architectures are described. The advantages of FSOI are formulated in
terms of topological transformations and geometric scaling rules that derive
from the differing physical constraints of 3-D and planar
interconnections. By casting a multiprocessor
interconnection problem as a combination of topological transformations, it is
shown that any multistage interconnection network can be mapped onto a common
FSOI module. The topological advantages
of FSOI are shown to provide large interconnection resource reductions over
equivalent planar interconnection schemes.
FSOI are further shown to provide significant performance advantages in
volume, signal latency, and interconnection power requirements for problems
with Bisection Bandwidths (BBs) in the > 1Tbit/s regime. The benefits of FSOI are greatest for
applications in which globally interconnected networks are required to
implement links across many smart pixel integrated circuit chips. In such a globally interconnected module, the
optical aberration of distortion is most problematic. A novel method for canceling distortion in
FSOI systems is presented along with experimental validation. The status of the FAST-Net (Free-space Accelerator for Switching Terabit Networks)
prototype demonstration effort, which has the goal of demonstrating an
FSOI-based multiprocessor high-BB interconnection fabric, will also be
discussed. The FAST-Net concept
uses dense arrays of high-speed Vertical Cavity Surface Emitting Lasers
(VCSELs) and Photodetectors as the I/O for a globally interconnected multi-chip
module. Results of the integration and
packaging of the VCSEL-based smart pixel arrays in the FAST-Net project and related efforts will be presented.
Biography
Marc P. Christensen received the B.S. in Engineering Physics from
Cornell University in 1993, the M.S. in Electrical Engineering from George
Mason University in 1998, and the Ph.D. in Electrical and Computer Engineering
from George Mason University in 2001. From
1991-1998 he was a staff member and technical leader in BDM’s Sensors and
Photonics group. His work ranged from
developing optical processing and interconnection architectures, to infrared
sensor modeling and analysis. In 1997,
he co-founded Applied Photonics. His primary responsibilities included hardware
demonstration for the DARPA MTO FAST-Net,
VIVACE, ACTIVE-EYES
programs. All of which incorporated
precision optics and micro-optoelectronic arrays into large system level
demonstrations. In 2002 he joined Southern
Methodist University where he is currently an assistant professor in the
electrical engineering department. He
has co-authored 12 journal papers and over 30 conference papers. In 2002, he
was the Workshop Chair for the Workshop on High Speed Interconnections within
Digital Systems (an IEEE ComSoc
conference). Dr. Christensen has two
patents in the field of free space optical interconnections. He is member of the Optical Society of
America and the IEEE Communications and Lasers and Electro-optics Societies.
" Quantum Well and Quantum Dot Intermixing
for
Optoelectronic Device Integration
"
Professor
Chennupati Jagadish
Department of Electronic Materials
Engineering
Australian
National University
Thursday, October 30th, 2003
(at 6:00 p.m. refreshments with
the speaker)
PLACE: University of Texas at Dallas, Galaxy Room, Student Union
Click
here for campus map, building 9
Abstract
Integration of optoelectronic devices is of
current interest due to its application in communication systems for the
fabrication of wavelength division multiplexing (WDM) sources and photonic
integrated circuits (PICs). Quantum well
intermixing is an enabling technology for the integration of optoelectronic
devices. In this talk, I will review
various quantum well intermixing techniques and their suitability for various
applications. Main techniques covered
are impurity free disordering and implantation induced disordering. Results on multi-wavelength lasers and
quantum well infrared photodetectors based on GaAs/AlGaAs/InGaAs material
system will be presented. Potential of
these technique for the integration of devices based in InP/InGaAs materials
system and InGaAs quantum dots will be discussed.
Biography
Professor Chennupati Jagadish is Head of the Semiconductor
Optoelectronics and Nanotechnology Group in the Research School of Physical
Sciences and Engineering at the Australian National University. Professor
Jagadish is a winner of 2000 Institute of Electrical and Electronics Engineers,
Inc (USA) (IEEE) Millennium Medal and also a Distinguished Lecturer of IEEE
Electron Devices Society (EDS) as well as Distinguished Lecturer of LEOS. He
has published more than 380 research papers (250 journal papers), co-authored a
book and edited four conference proceedings. Prof. Jagadish is currently Chair
of the IEEE Optoelectronic Devices Technical Committee of EDS and the
Nano-Optoelectronics and Nano-Photonics Technical Committee of IEEE
Nanotechnology Council. He is also an
elected member of EDS AdCom, member of AdCom of IEEE Nanotechnology Council and
a member of compound semiconductor devices and circuits technical committee and
nanotechnology technical committee of EDS. He has been elected as
Vice-President (Publications) of the IEEE Nanotechnology Council for 2004 and
2005. Professor Jagadish is a Fellow of
IEEE, Australian Institute of Physics,
the Institute of Physics (UK), the Institute of Nanotechnology (UK) and the
Australian Academy of Technological Sciences and Engineering. Prof. Jagadish is
also an Associate Editor of IEEE/OSA Journal of Lightwave Technology, Journal
of NanoScience and NanoTechnology.
Exceptional Talk 2003/2004
Series --- September 24th
" Imaging
with Terahertz Waves"
Dr.
Daniel Mittleman
ECE Department
Rice
University
Wednesday, September 24th, 2003
(at 6:00 p.m. refreshments with
the speaker)
PLACE: University of Texas at Dallas, Galaxy Room, Student Union
Click
here for campus map, building 9
Abstract
Traditionally, the
region of the spectrum between 100 gigahertz and 10 terahertz (corresponding to
the wavelength range 30 microns – 3 mm) has been among the least explored, due
in part to the difficulties associated with efficient generation and detection
schemes. However, the recent development of a number of new experimental
techniques has sparked a growing interest in the use of terahertz radiation for
imaging, spectroscopy, and a variety of commercial applications. This talk
presents an overview of this rapidly developing field, and a description of a
few of the unique imaging capabilities of the “T-ray” imaging system. For
example, by combining interferometry with the coherent detection capability of
time-domain spectroscopy, it is possible to form time-of-flight images with a
depth resolution well below the limit imposed by the coherence length of the
radiation. The use of broadband radiation for imaging also requires a
rethinking of such concepts as the Fresnel zone, which is typically defined
only at a single frequency. Such considerations have a bearing on the lateral
resolution in a tomographic image, and have implications in fields as diverse
as biomedical imaging and geophysical prospecting.
Biography
Dr. Mittleman received his B.S. from the Massachusetts Institute of Technology
in 1988, and his Ph.D. in 1994 from the University of California Berkeley, both
in physics. After two years as a post-doctoral researcher at Bell Laboratories,
he joined the Electrical and Computer Engineering Department at Rice University
in 1996. His current research involves
imaging and sensing with terahertz radiation, with a particular focus on the
use of terahertz pulses to study light scattering and photon diffusion. In
2002-2004, Dr. Mittleman is a Distinguished Lecturer for the IEEE Lasers and
Electro-Optics Society.
" Optical Device Integration and Connectivity:
Techniques, Challenges and Opportunities"
John
Carberry
CEO
Neptec Optical Solutions
Thursday, May 29th, 2003
(at 6:00 p.m. refreshments with
the speaker)
PLACE: University of Texas at Dallas, Galaxy Room, Student Union
Click
here for campus map, building 9
Abstract
Solid state devices such as
lasers, detectors, amplifiers, modulators have made great progress in
performance, economy and reliability. While many comparisons are drawn between
the history of the computer industry, PC
Boards and the IC chips, the stunning differentiator continues to be the fact that
we move in copper not by moving
electrons but in waves, while in
fiber optics we function by actually
moving the photon. While the PC board does integrate many functions
efficiently, it also must be recognized that it brings together for discrete assembly
many disparate objects and devices wherein the problems of the pig tail are not
encountered. Thus, the problem of the so called “pig tail” raises the question
of when and if fiber optics will find efficiencies and scales, such as Moore’s
Law, in integrating fiber optic functions. In this presentation several aspects
of device integration and connectivity will be explored with regard to the
problem of connecting devices to fiber, exploring engineering and manufacturing
perspectives.
Biography
Founding Neptec Optical Solutions and Neptec in late 1995, John has been active
as a technical and marketing leader, focusing on developing polishing
technologies with industry leading low random mating losses, coupler tree
technology for high uniformity port to port output, optical switch technologies
for robust discrete hardened low cost solutions, variable optical attenuator
technology for similar applications, fiber management and interface products,
as well as focusing on market, technical and industry trends.
Having been involved in fiber optics since the
late 70s, John has contributed technical innovations through patents, technical
papers, and products in the areas of silicate chemistry and precursors (John is
the founder and technical initiator and major shareholder of Silbond, perhaps
the world’s largest provider of high quality purity ethyl silicate, a precursor
source of silica for specialty glass, PWGs, passivation, aerospace castings,
etc) zirconia and alumina ferrules, high frequency sources and tuning products
for communication and electronic countermeasure applications such as RF
transistors, TWOs, BWOs, microwave and RF communications devices, as well as
coupler, TEC, termination, optical switch and attenuators in the fiber optic
business.
One of John’s techniques for characterizing the
markets is “choke point analysis” of key elements such as ferrules, fiber
precursors, node, hub and head end demographics, as well as balance sheet,
funds flow and cash flow analysis of market funnel players. These techniques
have been proven to be good predictors of the balance for supply and demand,
for instance, providing the basis for John to predict in 1999 a fiber and
ferrule shortage coming in 2000.
Papers on zirconia,
ferrules, Deming and Quality, polishing, aerospace castings, multiple patent
holder in technical ceramics, optical switching, optical fiber shaping, core
shaping, optical fiber management, orthodontics, RF electron sources, silica
and silicon processing.
Has sat on multiple boards, in Japan,
Switzerland, England, France, Belgium, and the US.
Previously CEO of Ceradyne (bringing it public in
1984), as well as Ceramatec, Minco, and Silbond. While at Kyocera and before was active in
development of ferrules from late 70s onward.
While at Silbond and onward actively involved in ethyl silicate
developments in glass. Was active in late 80s in transition from alumina to
zirconia ferrules.
Main interests today revolve around studying the
evolution of telecommunications technologies and markets, especially with
regard to CATV and Metro networks evolution and business development.
Exceptional Talk 2002/2003
Series ---
" Femto and Pico-Second Optical Pulses from
Laser Diodes"
Dr. Nikolai Stelmakh
University of Texas at
Wednesday, May 14th, 2003
(at 6:00 p.m. refreshments with
the speaker)
PLACE: University of Texas at Dallas, Galaxy Room, Student Union
Click
here for campus map, building 9
Abstract
New demands on the stability of
laser pulses, on the compactness and effectiveness of the optical pulsed
sources, crucial to the multiple electro-optical applications and space telecommunications,
bring a new interest to all-diode optical pulse sources based on single or
array laser diodes.
The main basic concepts and particularities of
physical process in semiconductor laser that govern the different regimes of
short pulse generation will be present as an introduction into the chirped
mode-locked regime demonstrated for the first time in 1992. Special attention
will be devoted to presentation of an unique semiconductor material obtained by
heavy ion irradiation as a femtosecond saturable absorber. A huge capacity of
carrier recombination of such material give a possibility to create an all
optical gate with potential modulation frequencies over 1THz.
These materials introduced in the cavity of semiconductor laser
bring many surprising results: phase-amplitude coupling factor over 20,
Q-switch with pulse duration less than round-trip of cavity, pulse repetition
frequency higher than 500GHz, a typical pulse-width in mode-locking regime
around of 1 picosecond. Nevertheless, the wide amplification spectra of laser
diode (higher than 20nm) suggest the generation of pulses as short as 50 fs.
During more then ten years, a large variety of ideas and cavity configurations
were investigated to obtain this full spectra mode-locking. In 1992, crucial
experiments were performed and 250 fs 25 W pulses were obtained directly from
semiconductor laser. The conceptual development of Master equation for
mode-locked laser diodes, key experiments leading to this results, recent
achievements on array and matrix laser diode structures and today's
perspectives will be discussed during the seminar.
Biography
Dr.
Nikolai Stelmakh started his technical and scientific career early being a
student of Ioffe Physico-Thechnical Institute of St-Petersburg. His first work
was devoted to the investigation of the inertial property of ions in superionic
crystals. The results of his work were largely used later in military
applications as instantaneous batteries and high acceleration sensors. In 1985, he joined Alferov's laboratory and co-developed
together with E.L Portnoi a significant improvement of an irradiation technique
to reduce the recombination time in semiconductors. In 1990, he joined Centre National de la Recherche Scientifique (CNRS)
as a research scientist. During 1990 to 1996 he produced a number of
significant works in the domain of pulsed diode lasers. Among the others, the
injection seeding technique of Q-switched laser diodes (1990), demonstration of
optical 160fs 100W pulses from a mode-locked diode laser(1992), and
demonstration of ~ 1-microjoule optical pulses from laser diode array(1996). In 1998, he produced a series of works demonstrating the
high recombination capacity of semiconductor material irradiated by super-heavy
ions. Up to 2000, he was a co-leader of RNRT project ASTRE united CNRS, Alcatel
and CNET to develop an all optical non-linear filter for noise reduction in
telecommunication lines on the basis of these irradiated materials.
In 2000 Dr. Stelmakh
was invited in US by the pioneer of heterostructure lasers and silicon optical
bench technology (modern name PLC) Dr. Rudolf Kazarinov to found Applied WDM,
Inc. His technical and organizational contributions bring him to a position of
COO/VP technology of Applied WDM.
Today he is a Visiting
Associate Professor at University of Texas Arlington working on the development
of the next generation of AWG multiplexers and other PLC devices enabling a
hybrid package of pulsed laser diodes and planar waveguide technology. His
current research interest includes non-linear organic materials and microwave
optics.
He is an author of more
then 100 publications and 5 patents. He is recipient of 2000 Blondel's medal of
European society of Electrical engineers. He is a senior member of IEEE.
" The Collapse of the Semiconductor
Laser Marketplace: Fact or Fiction?"
Dr. Jim Tatum
VCSEL Optical Product Division
Thursday,
April 17th, 2003 6.30pm
Abstract
Have you ever wondered why the
laser marketplace experienced the “nuclear winter” of 2002? Was it the economy?
Was it the threat of terrorism? Was it overzealous investors or mad research
scientist? Or was it just bad business? Will the industry recover, and when?
How has the semiconductor laser industry reacted to the hangover from the
telecom exuberance? Is there life after telecom? These are some of
uncertainties plaguing the semiconductor laser industry today. While there may
never be complete solutions to these questions, this talk will offer some
opinions, scope the state of the semiconductor laser industry today, apply
economic principles to describe the telecom bubble, and forecast the future of
the communications industry. Even during the meltdown of the telecommunications
segment, other segments of the semiconductor laser market were experiencing
double digit growth. For example, the widespread popularity of DVD players has
pushed production of these laser systems into overdrive. The analysis presented
begins with consumer driven demand that can be translated into market driving
forces, which are further reduced to demand in the laser components industry.
Biography
Dr. Jim Tatum is the Strategic
Marketing Manager for Honeywell’s VCSEL optical products division, where he is
responsible for both the VCSEL and Detector product lines. Prior to this
position, Dr. Tatum was the VCSEL Technology Manger at Honeywell, and was
responsible for the design and manufacturing of VCSELs and detectors. Dr. Tatum
is active in optical data communications standards, and is recognized worldwide
as an expert in the VCSEL and data communications industry. He has authored
over 50 technical papers and application notes, and has delivered numerous
conference and industry panel presentations. Dr. Tatum received the Ph.D. in
Electrical Engineering from the University of Texas at Dallas in 1995.
"Low Noise Avalanche Photodiode"
Dr. John David
Department of Electronic Engineering
University of
Sheffield, S13JD UK
Monday, Mar 24th, 2003
(at 6:00 p.m. refreshments with
the speaker)
NEW PLACE: University of Texas at Dallas, Galaxy Room, Student Union
Click
here for campus map, building 9
Abstract
Avalanche
photodiodes (APDs) are used in many applications when conventional unity gain
photodiodes cannot provide enough sensitivity and the extra amplification provided
by the impact ionization process gives it an advantage. Unfortunately this
amplification or gain of the incoming optical signal is always accompanied by
some ‘excess noise’ due to the stochastic nature of the ionization process and
this sets a limit to the maximum useful gain. Early work by McIntyre showed
that the excess noise depended on the ratio of hole ionization coefficient (b) to electron ionization
coefficient (a). a and b are semiconductor
material dependent and unfortunately most III-V materials have a»b, giving rise to
relatively high excess noise. Since the
ionization coefficients depend on the details of the band structure it is
extremely difficult to modify, even using band-gap engineering techniques such
as superlattices or MQWs.
In
recent years, work done at the University of Sheffield and the University of
Texas (Austin) has shown that low excess noise can be obtained in homojunction
structures simply by utilising thin avalanching regions. Experimental results
show that contrary to conventional theory, the excess noise actually decreases
as the avalanching width reduces. This behaviour has now been observed in
virtually all semiconductor materials including GaAs, AlGaAs, InP, AlInAs and
even silicon. The reason for this anomalous behaviour in thin devices is due to
the ‘dead space’ (d), defined as the
minimum distance a carrier has to travel before it is in equilibrium with the
electric field. Conventional models of the ionization process ignore d. This assumption is generally valid in
devices with thick avalanching widths in which the dead space distance, d, is relatively small compared to the
avalanching width, w. In thin
avalanching width structures, d
becomes a significant fraction of w
and the ionizing process becomes more deterministic, reducing the stochastic
variations that give rise to the excess noise.
This
talk will review these results and show that in addition to reducing the excess
noise, thin avalanching widths offer APDs with other advantages such as lower operating
voltages, better temperature stability and predicted enhanced speed of
operation.
Biography
Dr. John
David obtained his B.Eng and Ph.D. in Electronic Engineering from the
University of Sheffield. After working on the ionization coefficients in
AlGaAs, he joined the Central Facility for III-V Semiconductors in Sheffield in
1985 where he was responsible the characterisation activity. In 2001 he joined
Marconi Optical Components (now Bookham Technologies) before returning to a
faculty position in Sheffield in September 2002. He has published in excess of
130 journal papers and has 120 conference presentations, largely in the areas
of III-V characterisation, impact ionization and avalanche photodiodes.
Quantum
Cascade Laser
Claire
Gmachl
Click here to start
"Intimate integration
of vertical-cavity surface-emitting lasers with VLSI circuits"
Dr. Ashok Krishnamoorthy
Aralight, Inc.
Monroe Township, NJ 08831
Tuesday,Sept 17th, 2002 6.30 pm
(at 6:00 p.m. refreshments with the speaker)
NEW PLACE: University of Texas at Dallas, Engineering Building, ECN 2.704
Click
here for campus map, building 14
Abstract
Individual and Parallel optical interconnects based on vertical-cavity surface-emitting
lasers (VCSELs) are being widely deployed today in switching and routing
systems, local area networks, and central offices,and are being designed into
future campus and metro applications. One advantage of the VCSEL device that
has yet to be fully capitalized upon is its ability, with certain
modifications, to be directly connected to electrical circuits at the chip and
wafer levels. If properly exercised, this can enable a new dimension of
integration of photonics-to-electronics, ushering in a fundamentally lower-cost
optoelectronics manufacturing platform and enabling new and perhaps even more
pervasive applications of photonics.
There now exist manufacturable technologies that can provide chips with 2-D
arrays of VCSELS on VLSI circuits. One such photonics-on-VLSI (or
Opto-Electronic-VLSI) technology is based on the hybrid flip-chip area-bonding
of VCSELs and p-i-n photodetectors and directly to the surface of active
silicon VLSI circuits. Other key components that have also attracted a good
deal of attention are 2-D array electrical and optical packaging techniques and
connectors to support these optoelectronic chips and provide the physical means
of transporting and distributing the data "fire-hoses" to and from
the OE-VLSI chips.
In this presentation, we will describe the status, process, packaging, and
performance of OE-VLSI circuits and progress made towards commercializing this
technology for high-density optical transceivers and switching products.
Biography
Dr. Ashok V. Krishnamoorthy was born in Madras (now Chennai), India. He came to
the United States in 1982 and received the BS in Engineering (with Honors) from
the California Institute of Technology, the MS in Electrical Engineering from
the University of Southern California, and the Ph.D. in Applied Physics from
the University of California, San Diego. He then worked as part of the research
faculty in the Electrical and Computer Engineering department at UCSD. In early
1994, he joined the Advanced Photonics Research Department at Bell
Laboratories, Holmdel, New Jersey to work on the integration of photonic
devices to Silicon circuits. In 1999, he joined the Lucent New Ventures
organization as a program manager with the aim of commercializing
Optoelectronic-VLSI technology. As of September 2000, he joined AraLight as a
founder, its President and Chief Technology Officer.
Dr. Krishnamoorthy has served as member and chair of numerous conference
program committees for the IEEE Laser and Electro-Optics Society (LEOS),IEEE
Computer Society, and the Optical Society of America, and was the general chair
for the 1998 IEEE LEOS Workshop on High Speed Interconnections within Digital
Systems. Dr. Krishnamoorthy has been granted 22 US Patents with 15 additional
pending, as well as several foreign patents. He was named an Outstanding Young
Electrical Engineer for 1999 by the Eta Kappa Nu engineering society.
Jose Jimenez
"Beam Propagation Method in Integrated Optics"
Thursday, May 23, 2002, 7.30 PM
(at 7:00 p.m. refreshments with speaker)
Southern Methodist University at Richardson
1500 International Parkway, Richardson, TX 75081
Room 2.02
Click here for Directions to SMU RICHARDSON
Abstract
This talk is a short course on Beam Propagation Method, a commmonly used
algorithm to study the propagation characteristics of waveguides in integrated
optics. In this talk we will review:
The origin and formulation of BPM
Problems that can be solved and problem that can not be solved
Discretization Schemes adn Boundary Conditions
Alternative Algorithms
Biography
Jose Jimenez has worked in both
integrated optics and semiconductor devices for the last 10 years in
laboratories such as Telefonica R&D in his native country Spain, T.J.
Watson IBM Research Laboratory and Beckman Institute in Urbana, IL. The last
two years he was design manager at Nanovation Technologies, a photonics startup
in Chicago, working on the design of InP and Silica integrated optics devices.
Presently, he is leading a small Photonics Group (5 people) at TriQuint
Semiconductor in Dallas.
Dr. Reddy N. Urimindi
"Are There Killer Applications Driving High Capacity Optical
Networks?"
Thursday, March 14, 2002, 7.30 PM
(at 7:00 p.m. refreshments with speaker)
Southern Methodist University at Richardson
1500 International Parkway, Richardson, TX 75081
Meeting room 202
Click here for Directions to SMU RICHARDSON
Abstract
Internet traffic is surging and so is business data in the backbone networks.
Private lines are being replaced by low cost virtual private networks (VPNs).
Traffic mix is shifting from legacy voice to IP data. Network operators are
experiencing the negative impact of the commoditization of bandwidth in their
financial statements. Gigabit Ethernet for business and broadband service for
residential users is gaining momentum. What are the "killer"
applications that would generate the much needed revenue for the network
operators? Video delivery, digital photography, distance education and
telemedicine are some of the examples. This talk will provide an overview of
current service delivery and the major applications driving the demand for
optical networks.
Biography
Reddy N. Urimindi is a Principal Network Consultant in the
Product Management/Market at Celion Networks responsible for the engineering
and technical marketing aspects of the product. Dr. Urimindi has more than
thirteen years of professional experience in the areas of Telecommunication
Research, Network Design, Technology Planning, Network Deployment, Sales and
Marketing. Prior to joining Celion, he was the Vice President of Technical
Marketing for IP Communications, the largest independent broadband service
provider in the South West and is based in Dallas. Dr. Urimindi was the
founding employee of IP communications with key responsibilities in the areas
of Network Architecture and Technical Marketing.
Prior to IP Communications, he held various senior level
technical and management positions at Lucent Technologies and Worldcom
(formerly of MCI). While at Lucent, he designed several service provider
networks in the Central Region working with the data network sales team. Dr.
Urimindi was the key architect of Worldcom's core optical network from the
concept to deployment. Dr. Urimindi currently holds three United States patents
in the area of optical network architecture and restoration. He is a frequent
writer in the industry magazines and a speaker at the major industry
conferences. He obtained his BS, MS and Ph.D. in Electrical Engineering and MBA
in Corporate Finance.
Dr. Christopher
J. Myatt
"Laser cooling and trapping along the road to Bose-Einstein
Condensation."
Thursday, November 8, 2001, 5.30 PM
(at 5:00 p.m. refreshments with speaker)
Southern Methodist
University
Caruth Hall - School of Engineering and Applied Science
3145
Dyer St,Dallas, TX 75205
second floor, room 229
Parking
is available at Airline Parking Garage or Moody Parking Garage
Click
here for Directions to SMU
Abstract
Bose-Einstein Condensation (BEC), the observation of which was recently
recognized with the award of the 2001 Nobel Prize, is a low temperature quantum
phenomenon that took nearly 75 years to achieve after the prediction of
Einstein. A series of technological advances in trapping and cooling of dilute
gases were made during the 1980s and 1990s that allowed the direct observation
of BEC. BEC was initially realized through a multi-step process where a sample
of atoms are cooled and trapped in a magneto-optical trap, then transferred to
a purely magnetic trap, and finally evaporatively cooled to the BEC transition.
This talk will review the physics and technology behind these cooling processes,
with a particular emphasis on the laser cooling and trapping aspects.
Biography
Dr. Christopher J. Myatt, CEO and
Director of Technology, Precision Photonics Corporation. Dr. Myatt has been
pushing forefront of precision laser technology for the past twelve years. In
founding Precision Photonics, Dr. Myatt saw an ongoing need for commercial
equipment for precise measurement and control of laser spectral properties. In
its first year of business, Precision Photonics has secured backing of an investment
incubator in California, introduced products on the market, and built a strong
R&D and manufacturing team. Dr. Myatt's research accomplishments include
pioneering a number of techniques using diode lasers for spectroscopy,
discovery of novel effects in a new state of matter (Bose-Einstein
condensation), and creation & study of a prototype quantum computation
device. Dr. Myatt has authored or co-authored over 30 publications on these
studies. Dr. Myatt holds BS and BA degrees from Southern Methodist University,
a Ph.D. in atomic physics from the University of Colorado, and was a NRC
Post-Doctoral Fellow with NIST.
Dr. Bob Biard
"Inventing the LED"
Thursday, October 25, 2001, 7.30 PM
(at 7:00 p.m. refreshments with speakers)
Texas Instruments/Raytheon
North Building Mini-Auditorium, Dallas
Abstract
Biography
Dr. J. R. (Bob) Biard became Chief
Scientist of the Honeywell MICRO SWITCH Division in 1987. He retired 12/31/99
and was hired back by Honeywell as a consultant. In this job assignment Dr.
Biard is responsible for developing long range technology, product road maps,
and interfacing between MICRO SWITCH Division, the Honeywell Corporate R&D
Labs, and universities. He started the MICRO SWITCH Sensor Design Center in
Richardson, Texas and his product development responsibilities include
optoelectronic components (light emitting diodes and photo detectors), fiber
optic components and transmitter & receiver modules, and silicon Hall
effect and pressure sensors. He is also on the staff of Texas A&M
University as an Adjunct Professor of Electrical Engineering. He has served in
this capacity since 1980. From 1978 to 1987 Dr. Biard was Chief Scientist of
the Honeywell Optoelectronics Division and was a member of the Components Group
Sensor Planning Team. He was also the Components Group representative on the
Honeywell Technology Board (HTB). The HTB was concerned with the development
and transfer of technology throughout the Honeywell corporate structure. Dr.
Biard joined Spectronics, Inc. as Vice President of Research in 1969 when the
company was founded. Spectronics, Inc. was acquired by Honeywell in 1978.
Previously he worked for Texas Instruments, Inc., from 1957 to 1969. While at
TI he participated in the development of transistor circuits, microwave and
optoelectronic components, avalanche photodiodes, silicon MOS technology, and
compound semiconductor materials technology. In 1991 Dr. Biard was elected to
membership in the National Academy of Engineering. In 1989 he received the
Honeywell Lund Award. In 1986 he was recognized as a Distinguished Alumnus of
Texas A&M University. In 1985, He was a recipient of the Patrick E.
Haggerty Innovation Award for his contribution to the design and development of
Schottky Logic. In January 1968, Dr. Biard was elected a Fellow of the IEEE
with a citation "For outstanding contributions in the field of
optoelectronics."
In the course of his technical career,
Dr. Biard has published more than two dozen technical papers and made about the
same number of unpublished presentations at major technical conferences. He
also developed a one week seminar on Fiber Optic Data Transmission that he
presented on five occasions in various parts of the U.S..
Dr. Biard holds 34 U.S. and 17 foreign
patents. Five of his more significant patents are listed below. These patents
include one of the first transistor DC differential amplifiers, the GaAs light
emitting diode, the optical isolator, Schottky clamped logic circuits, and the
MOS read only memory.
Dr Marko
Labudovic
"Laser Diode Packaging Technology: 980 nm EDFA Pump
Lasers for Telecommunication Applications "
Research and Development Team
Corning Lasetron
Bedford, MA, USA
Thursday June 28, 2001 7.30 pm
(at 7:00 p.m. refreshments with the speaker)
NEW PLACE: TI Spring Creek, Bldg 2 (Chase Oaks just west of Hwy 75 between
Legacy and Spring Creek), DLP Demonstration Theater (lobby area)
Directions: The main entrance (Bldg. 2 lobby) is located behind the 3 flag
poles.
Physical address is 6550
Chase Oaks Blvd.
Abstract
Corning Lasertron, a part of The Photonic Technologies Division of Corning
Incorporated, is a premier designer and manufacturer of optoelectronic
components for telecommunication applications, recognized as one of the premier
suppliers of 980 pump lasers. Corning's strong technology base allows for a
variety of R&D activities at Corning Lasertron, including the design and
development of the advanced optoelectronic packaging applications. The
significance and the most important aspects of packaging of laser diodes will
be addressed and the package assembly of 980 nm EDFA pump lasers will be
presented with particular emphasis on fiber pigtail process. Since the fiber
used for this purpose is a single mode fiber, the alignment tolerances required
for optimum light coupling between rectangular shaped laser waveguide and the
round optical fiber core are very tight, typically in the submicron regime.
Once the fiber is aligned to the laser waveguide with optimum coupling
efficiency, it is necessary to fix it in place in a secure fashion. The method
of choice for doing this is laser welding, due to its inherit attributes of
strength, cleanliness and long-term reliability. In fiber pigtail process,
laser welding is used to "lock" fiber-pigtails into precise alignment
with laser diode chips. Precise alignment is crucial to the success of laser
diodes for telecommunication applications.